Description

Thermally induced chemical vapor deposition (CVD) is a powerful method for depositing uniform layers of various dielectric, semiconducting, and metallic materials, either in monocrystalline, polycrystalline, amorphous, or epitaxial form, on small or large-area substrates.

Typical coating materials include pyrolytic carbon, silicon carbides, and boron nitrides. The use of synthetic precursors ensures extremely pure coatings that meet the typical requirements of the semiconductor industry.

Depending on the process parameters, a wide range of coating thicknesses is possible—from single or few atomic layers to solid protective or functional coatings with thicknesses ranging from a few nanometers to hundreds of micrometers and even up to monolithic components several millimeters thick.