Description

Thermally induced chemical vapor deposition (CVD) is a powerful way of depositing homogeneous layers of various dielectric, semiconducting and metallic materials, either in monocrystalline, polycrystalline, amorphous or epitaxial state on small or large area substrates.

Typical coating materials include pyrolytic carbon, silicon carbides and boron nitrides. By using synthetic precursors, the coatings are extremely pure and meet the typical requirements of the semiconductor industry.

Depending on the process parameters, a wide range of layer thicknesses is possible, from single or a few atomic layers to solid protective or functional layers with a thickness ranging from a few nanometers to hundreds of micrometers and beyond to monolithic parts with a thickness of several millimeters.

Thermally induced chemical vapor infiltration (CVI) is a CVD-related technology for infiltrating matrix material into porous or fibrous preforms to produce composite parts with improved mechanical properties, corrosion resistance, thermal shock resistance and low residual stresses.

Complex shapes can be produced in a variety of sizes and compositions. By switching between multiple gas orifices, the porous or fibrous preforms can be coated with multi-layer interfacial coatings before the actual deposition of the matrix itself begins.

Main specifications